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| TENTATIVE PIM MODULE 11KW 11KW 200V PVD110PVD110-6 Futures : Integrated in 3Phase Diode Bridge, Thyristor Switch, Inverter, Brake, and Snubber For 11kw 200V Inverter MAXMUM RATINGS (Tc=25C) Item Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage 3 Phase Average Rectified Out -Put Current Rectification Surge Forward Current Diode I Squared t Critical Rate of Fall of Forward Current Repetitive Peak Off-State Voltage Non-Repetitive Peak Off-State Voltage Average Rectified Out-Put Current Surge Forward Current I Squared t Switch Critical Rate Of Rise Of Turn-On Current Thyristor Peak Gate Power Average Gate Power Peak Gate Current Peak Gate Voltage Peak Gate Reverse Voltage Collector-Emitter Voltage Gate-Emitter Voltage DC Collector Current Inverter 1ms IGBT DC Forward Current 1ms Collector Power Dissipation Collector-Emitter Voltage Gate Emitter Voltage Brake DC IGBT Collector Current 1ms Collector Power Dissipation Repetitive Peak Reverse Voltage Snubber Forward Current, DC Diode Surge Forward Current Operating Junction Temperature Range Storage Temperature Range Isolation Voltage(Terminal to Base) Isolation Resistance(Terminal to Base, @DC=500V) Mounting Torque(Module Base to Heatsink) Approximate Weight : 400g Symbol VRRM VRSM IO(AV) IFSM I2t -di/dt VDRM VRSM IO(AV) ITSM I2t di/dt PGM PGM(AV) IGM VGM VRGM VCES VGES IC ICP IF IFM PC VCES VGES IC ICP PC VRRM IF IFSM Tjw Tstg Viso Riso Ftor Rated Value 800 900 100 900 4050 160(@ :IFM=60A, VR=500V) 800 900 100 1000 5000 100 5 1 2 10 5 600 +/- 20V 100 200 100 200 390 600 +/- 20V 50 100 215 600 15 150 -40 to +150C(notes:+125 C > Can not be biased.) -40 to +125C 2500(@AC, 1minute), 3000(@AC, 1second) 500 (M4), 1.4 Unit V A A2s A/s V A A2s A/s W A V V A W V A W V A C V M.ohm N*m ELECTRICAL CHARACTERISTICS (Tc=25C Unless otherwise noted) Characteristic Symbol Test Condition 3 Phase Peak Reverse Current *1 Rectification Diode Peak Reverse Voltage *1 Peak OFF-State Current Peak Reverse Current Peak On-State Voltage Gate Current to Trigger Switch Thyristor Gate Voltage to Trigger Gate Voltage to Non-Trigger Critical Rate Of Rise Of Off-State Voltage VGT VGD dv/dt IR VF IDM IRM VTM IGT Tj=150C, VRM=VRRM IF=100A Tj=125C, VDM=VDRM Tj=125C, VRM=VRRM IT=100A Tj=-40C VD=6V Tj=25C IT=1A Tj=125C Tj=-40C VD=6V Tj=25C IT=1A Tj=125C Tj=125C, VD=2/3VDRM Min. 0.25 500 Typ. - Max. 10 1.50 50 50 1.50 200 100 50 40 25 20 - Unit mA A mA V mA V V V/s TENTATIVE Tj=125C, VD=2/3VDRM VRM=100V, dv/dt=20V/s -di/dt=20A/s Tj=25C, VD=2/3VDRM IG=200mA -diG/dt=0.2A/s Turn-Off Time Switch Thyristor Turn-On Time Delay Time Rise Time Latching Current Holding Current Collector-Emitter Out-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-On Time Switching Time Fall Time Turn-Off Time Peak Forward Voltage Reverse Recovery Time Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Peak Forward Voltage Reverse Recovery Time tq tgt td tr IL IH ICES IGES VCE(sat) VCE(th) Cies tr ton tf toff VF trr ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff VF trr 4.0 4.0 - 100 6 2 4 100 80 2.1 10000 0.15 0.25 0.20 0.45 1.9 0.15 2.1 5000 0.15 0.25 0.20 0.45 - 1.0 0.5 2.6 8.0 0.30 0.40 0.35 0.7 2.4 0.25 1.0 0.5 2.6 8.0 0.3 0.4 0.35 0.7 2.5 0.3 s mA mA A V V pF s V s mA A V V pF s V s Inverter IGBT VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=100A,VGE=15V VCE=5V,IC=100mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 3 ohm RG= 7.5 ohm VGE= +/- 15V IF=100A IF=100A,VGE=-10V, d/dt=100A/s VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 6 ohm RG= 10 ohm VGE= +/- 15V IF=15A IF=15A, di/dt=50A/s Brake IGBT Snubber Diode *1: per 1arm ELECTRICAL CHARACTERISTICS (Tc=25C Unless otherwise noted) Resistance Thermister B-Value Thermal Time Constant 75C 125C 25C/50C 25C/85C 5.00 0.97 0.27 3375 3420 10 k. ohm K s THERMAL CHARACTERISTICS Characteristic Thermal Impedance Rth(j-c) Junction to Case Test Condition Per :1 arm. Min. - Typ. - Max. 0.50 0.45 0.32 0.70 0.58 Unit C/W 3 Phase Rectification Diode Switch Thyristor Inverter IGBT Inverter Free Wheeling Diode Brake IGBT TENTATIVE PVD110-6 OUTLINE DRAWING (Dimensions in mm) CIRCUIT |
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